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| PartNumber | IPB60R099C6 | IPB60R090CFD7ATMA1 | IPB60R099 |
| Description | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | MOSFET | |
| Manufacturer | Infineon | Infineon | INF |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 37.9 A | - | - |
| Rds On Drain Source Resistance | 99 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 119 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 278 W | - | - |
| Configuration | Single | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C6 | - | CoolMOS C6 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6 ns | - | 6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | 12 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 75 ns | - | 75 ns |
| Typical Turn On Delay Time | 15 ns | - | 15 ns |
| Part # Aliases | IPB60R099C6ATMA1 IPB6R99C6XT SP000687468 | IPB60R090CFD7 SP002621132 | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPB60R099C6ATMA1 IPB60R099C6XT SP000687468 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 278 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 37.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Rds On Drain Source Resistance | - | - | 99 mOhms |
| Qg Gate Charge | - | - | 119 nC |