 | |  | |
| PartNumber | IPB031N08N5 | IPB031N08N5ATMA1 | IPB031NE7N3 |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 | MOSFET N-Ch 80V 120A D2PAK-2 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2.7 mOhms | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 87 nC | 87 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 167 W | 167 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 76 S | 76 S | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | 18 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 37 ns | 37 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | IPB031N08N5ATMA1 SP001227048 | IPB031N08N5 SP001227048 | - |
| Unit Weight | 0.079014 oz | 0.139332 oz | 0.139332 oz |
| Part Aliases | - | - | IPB031NE7N3GATMA1 IPB031NE7N3GXT SP000641730 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 214 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.1 V |
| Rds On Drain Source Resistance | - | - | 3.1 mOhms |
| Qg Gate Charge | - | - | 88 nC |
| Forward Transconductance Min | - | - | 150 S 75 S |