PartNumber | IPA80R650CEXKSA2 | IPA80R650CEXKSA1 | IPA80R650CEXKSA1 , 2SD18 |
Description | MOSFET CONSUMER | MOSFET CONSUMER | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220FP-3 | TO-220FP-3 | - |
Vds Drain Source Breakdown Voltage | 650 V | 800 V | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | - |
Height | 16.15 mm | 16.15 mm | - |
Length | 10.65 mm | 10.65 mm | - |
Series | CoolMOS CE | CoolMOS CE | - |
Width | 4.85 mm | 4.85 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPA80R650CE SP001313394 | IPA80R650CE SP001286432 | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Id Continuous Drain Current | - | 8 A | - |
Rds On Drain Source Resistance | - | 560 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.1 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 45 nC | - |
Minimum Operating Temperature | - | - 40 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 33 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 72 ns | - |
Typical Turn On Delay Time | - | 25 ns | - |