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| PartNumber | IPA023N04NM3SXKSA1 | IPA020213TDOKJ | IPA028N08N3 |
| Description | MOSFET | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Packaging | Tube | - | Tube |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPA023N04NM3S SP001953004 | - | - |
| Series | - | - | IPA028N08 |
| Part Aliases | - | - | IPA028N08N3GXK IPA028N08N3GXKSA1 SP000446770 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 42 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 26 ns |
| Rise Time | - | - | 59 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 89 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Rds On Drain Source Resistance | - | - | 2.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 77 ns |
| Typical Turn On Delay Time | - | - | 30 ns |
| Qg Gate Charge | - | - | 50 nC |
| Channel Mode | - | - | Enhancement |