IKW40N60DTPXKSA1 vs IKW40N60H3 vs IKW40N60DTP

 
PartNumberIKW40N60DTPXKSA1IKW40N60H3IKW40N60DTP
DescriptionIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off enerIGBT Transistors 600V 40A 306WIGBT 600V 40A 1,6V TO247-3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.6 V1.95 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C67 A80 A-
Pd Power Dissipation246 W306 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Series600V TRENCHSTOPHighSpeed 3TrenchStop
PackagingTubeTube*
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240240-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIKW40N60DTP SP001379680IKW40N60H3FKSA1 IKW4N6H3XK SP000769928-
Unit Weight0.213908 oz0.229281 oz-
Height-20.7 mm-
Length-15.87 mm-
Width-5.31 mm-
Package Case--*
Input Type--Standard
Mounting Type--*
Supplier Device Package--*
Power Max--246W
Reverse Recovery Time trr--87ns
Current Collector Ic Max--67A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--120A
Vce on Max Vge Ic--1.8V @ 15V, 40A
Switching Energy--1.06mJ (On), 610μJ (Off)
Gate Charge--177nC
Td on off 25°C--18ns/222ns
Test Condition--400V, 40A, 10.1 Ohm, 15V
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