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| PartNumber | IKW15N120T2 | IKW15N120T2FKSA1 | IKW15N120T2 K15T1202 |
| Description | IGBT Transistors LOW LOSS DuoPack 1200V 15A | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.2 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 30 A | - | - |
| Pd Power Dissipation | 235 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | TRENCHSTOP IGBT | TRENCHSTOP IGBT | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 30 A | - | - |
| Height | 20.9 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 5.03 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Gate Emitter Leakage Current | 600 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | TRENCHSTOP | TRENCHSTOP | - |
| Part # Aliases | IKW15N120T2FKSA1 IKW15N12T2XK SP000244961 | IKW15N120T2 IKW15N12T2XK SP000244961 | - |
| Unit Weight | 1.340411 oz | - | - |