IGW40T120 vs IGW40T120FKSA1 vs IGW40T120FKSA1 , 2SC5182

 
PartNumberIGW40T120IGW40T120FKSA1IGW40T120FKSA1 , 2SC5182
DescriptionIGBT Transistors LOW LOSS IGBT TECH 1200V 40AIGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation270 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
SeriesTRENCHSTOP IGBTTRENCHSTOP IGBT-
PackagingTubeTube-
Height20.95 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current600 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGW40T120FKSA1 IGW4T12XK SP000013886IGW40T120 IGW4T12XK SP000013886-
Unit Weight1.340411 oz--
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