HGTP7N60A4 vs HGTP7N60A4 7N60A4 vs HGTP7N60A4,HGTP7N60A4D,7

 
PartNumberHGTP7N60A4HGTP7N60A4 7N60A4HGTP7N60A4,HGTP7N60A4D,7
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS Series
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C34 A--
Pd Power Dissipation125 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTP7N60A4--
PackagingTube--
Continuous Collector Current Ic Max34 A--
Height9.4 mm--
Length10.67 mm--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current34 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Part # AliasesHGTP7N60A4_NL--
Unit Weight0.063493 oz--
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