FZT755TA vs FZT755TC vs FZT755

 
PartNumberFZT755TAFZT755TCFZT755
DescriptionBipolar Transistors - BJT PNP High VoltageBipolar Transistors - BJT PNP Medium Power
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max150 V- 150 V-
Collector Base Voltage VCBO150 V- 150 V-
Emitter Base Voltage VEBO5 V- 5 V-
Collector Emitter Saturation Voltage500 mV- 0.5 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFZT755FZT755-
DC Current Gain hFE Max30050-
Height1.65 mm--
Length6.7 mm--
PackagingReelReel-
Width3.7 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 1 A- 1 A-
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation2 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Top