FZT591ATA vs FZT591ATA-79 vs FZT591ATAPBF

 
PartNumberFZT591ATAFZT591ATA-79FZT591ATAPBF
DescriptionBipolar Transistors - BJT PNP Medium Power
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 500 mV--
Maximum DC Collector Current- 1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT591--
DC Current Gain hFE Max300--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 1 A--
DC Collector/Base Gain hfe Min30 at 2 A, 5 V--
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
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