FZT1147ATA vs FZT1147ATC vs FZT1147ATAPBF

 
PartNumberFZT1147ATAFZT1147ATCFZT1147ATAPBF
DescriptionBipolar Transistors - BJT PNP -12V VCEO 5A High Gain Med PWRBipolar Transistors - BJT NPN High Gain & Crnt
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 12 V- 12 V-
Collector Base Voltage VCBO- 15 V- 15 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 250 mV- 250 mV-
Maximum DC Collector Current5 A5 A-
Gain Bandwidth Product fT115 MHz115 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFZT114FZT1147A-
DC Current Gain hFE Max270270-
Height1.65 mm--
Length6.7 mm--
PackagingReelReel-
Width3.7 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 5 A- 5 A-
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 150 at 5 A, 2 V, 90 at 10 A, 2 V--
Pd Power Dissipation2.5 W2.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
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