FQP6N90 vs FQP6N90C vs FQP6N90/SSS6N90

 
PartNumberFQP6N90FQP6N90CFQP6N90/SSS6N90
DescriptionMOSFET 900V N-Channel QFETMOSFET 900V N-Ch Q-FET advance C-Series
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current5.8 A6 A-
Rds On Drain Source Resistance1.9 Ohms2.3 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation167 W167 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time55 ns60 ns-
Product TypeMOSFETMOSFET-
Rise Time80 ns90 ns-
Factory Pack Quantity501000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns55 ns-
Typical Turn On Delay Time35 ns35 ns-
Part # AliasesFQP6N90_NLFQP6N90C_NL-
Unit Weight0.050717 oz0.063493 oz-
Tradename-QFET-
Series-FQP6N90C-
Forward Transconductance Min-5.5 S-
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