FQP33N10 vs FQP33N10,33N10, vs FQP33N10,FQP33N10L

 
PartNumberFQP33N10FQP33N10,33N10,FQP33N10,FQP33N10L
DescriptionMOSFET 100V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance52 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation127 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP33N10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min22 S--
Fall Time110 ns--
Product TypeMOSFET--
Rise Time195 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.063493 oz--
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