FQP22N30 vs FQP22P10 vs FQP22N30C

 
PartNumberFQP22N30FQP22P10FQP22N30C
DescriptionMOSFET 300V N-Channel QFETMOSFET 100V P-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage300 V100 V-
Id Continuous Drain Current21 A22 A-
Rds On Drain Source Resistance160 mOhms125 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation170 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
SeriesFQP22N30--
Transistor Type1 N-Channel1 P-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min16 S13.5 S-
Fall Time100 ns110 ns-
Product TypeMOSFETMOSFET-
Rise Time230 ns170 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns60 ns-
Typical Turn On Delay Time35 ns17 ns-
Part # AliasesFQP22N30_NLFQP22P10_NL-
Unit Weight0.063493 oz0.050717 oz-
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