FQD6N60CTM-WS vs FQD6N60CTM vs FQD6N60CTM-NL

 
PartNumberFQD6N60CTM-WSFQD6N60CTMFQD6N60CTM-NL
DescriptionMOSFET 600V N-Ch MOSFET QFETMOSFET N-CH/600V/6A/ QFET C-Series
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current4 A4.5 A-
Rds On Drain Source Resistance2 Ohms1.2 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation80 W80 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time45 ns45 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time15 ns15 ns-
Part # AliasesFQD6N60CTM_WS--
Unit Weight0.009184 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-4.8 S-
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