FQD5N60CTM vs FQD5N60CTM,FQD5N60C,D5N6 vs FQD5N60CTM-CUT TAPE

 
PartNumberFQD5N60CTMFQD5N60CTM,FQD5N60C,D5N6FQD5N60CTM-CUT TAPE
DescriptionMOSFET 600V N-Channel Adv Q-FET C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD5N60C--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time46 ns--
Product TypeMOSFET--
Rise Time42 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFQD5N60CTM_NL--
Unit Weight0.009184 oz--
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