FQD2N90TM vs FQD2N90TF vs FQD2N90TM,FQD2N90,D2N90,

 
PartNumberFQD2N90TMFQD2N90TFFQD2N90TM,FQD2N90,D2N90,
DescriptionMOSFET 900V N-Channel QFETMOSFET 900V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current1.7 A1.7 A-
Rds On Drain Source Resistance7.2 Ohms7.2 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD2N90FQD2N90-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min1.7 S1.7 S-
Fall Time30 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time35 ns35 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time15 ns15 ns-
Unit Weight0.026103 oz0.009184 oz-
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