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| PartNumber | FQD12P10TF | FQD12P10TF_NB82105 | FQD12P10TM |
| Description | MOSFET 100V P-Channel QFET | MOSFET P-CH 100V 9.4A DPAK | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 9.4 A | - | - |
| Rds On Drain Source Resistance | 290 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 6.3 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 160 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-252-3 | - |
| Id Continuous Drain Current | - | - 9.4 A | - |
| Vds Drain Source Breakdown Voltage | - | - 100 V | - |
| Rds On Drain Source Resistance | - | 290 mOhms | - |