FQD12N20LTM vs FQD12N20LTM FQD12N20 vs FQD12N20LTM-CUT TAPE

 
PartNumberFQD12N20LTMFQD12N20LTM FQD12N20FQD12N20LTM-CUT TAPE
DescriptionMOSFET 200V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance280 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD12N20L--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min11.6 S--
Fall Time120 ns--
Product TypeMOSFET--
Rise Time190 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesFQD12N20LTM_NL--
Unit Weight0.009184 oz--
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