FQB14N30TM vs FQB14N30 vs FQB14N30 SMK1430DI

 
PartNumberFQB14N30TMFQB14N30FQB14N30 SMK1430DI
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseTO-263-3TO-263-3, DPak (2 Leads + Tab), TO-263AB-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current14.4 A--
Rds On Drain Source Resistance290 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min9.5 S--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time145 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time22 ns--
Part # AliasesFQB14N30TM_NL--
Unit Weight0.139332 oz--
Series-QFET-
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-300V-
Current Continuous Drain (Id) @ 25°C-14.4A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-5V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-40nC @ 10V-
Vgs (Max)-±30V-
Input Capacitance (Ciss) (Max) @ Vds-1360pF @ 25V-
FET Feature---
Power Dissipation (Max)-3.13W (Ta), 147W (Tc)-
Rds On (Max) @ Id, Vgs-290 mOhm @ 7.2A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-DPAK (TO-263AB)-
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