FQA38N30 vs FQA38N30(38N30) vs FQA38N30(SG)

 
PartNumberFQA38N30FQA38N30(38N30)FQA38N30(SG)
DescriptionMOSFET 300V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current38.4 A--
Rds On Drain Source Resistance85 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation290 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFQA38N30--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min24 S--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time430 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time170 ns--
Typical Turn On Delay Time80 ns--
Part # AliasesFQA38N30_NL--
Unit Weight0.225789 oz--
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