 |  | | |
| PartNumber | FP50R12KT4_B11 | FP50R12KT4 | FP50R12KT4 , 1SMB5925BT3 |
| Description | IGBT Modules N-CH 1.2KV 50A | IGBT Modules N-CH 1.2KV 50A | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Array 7 | 3-Phase | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Continuous Collector Current at 25 C | 50 A | 50 A | - |
| Package / Case | Econo 2 | Econo 3 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | 17 mm | - |
| Length | 107.5 mm | 107.5 mm | - |
| Width | 45 mm | 45 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FP50R12KT4B11BOSA1 SP000372909 | FP50R12KT4BOSA1 SP000372915 | - |
| Collector Emitter Saturation Voltage | - | 2.25 V | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Pd Power Dissipation | - | 280 W | - |
| Unit Weight | - | 6.349313 oz | - |