FP100R12KT4_B11 vs FP100R12KT4 vs FP100R12KT4-B16

 
PartNumberFP100R12KT4_B11FP100R12KT4FP100R12KT4-B16
DescriptionIGBT Modules N-CH 1.2KV 100AIGBT Modules IGBT-MODULE
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationArray 73-Phase-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Continuous Collector Current at 25 C100 A100 A-
Package / CaseEcono 3Econo 3-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height17 mm17 mm-
Length122 mm122 mm-
Width62 mm62 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesFP100R12KT4B11BOSA1 SP000355572FP100R12KT4BOSA1 SP000355578-
Unit Weight10.582189 oz10.582189 oz-
Collector Emitter Saturation Voltage-2.1 V-
Gate Emitter Leakage Current-100 nA-
Pd Power Dissipation-5.15 W-
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