FMY4AT148 vs FMY4A vs FMY4A , 1SMB16AT3G

 
PartNumberFMY4AT148FMY4AFMY4A , 1SMB16AT3G
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V, - 6 V--
Collector Emitter Saturation Voltage0.4 V, - 0.5 V--
Maximum DC Collector Current0.15 A--
Gain Bandwidth Product fT180 MHz, 140 MHz--
Maximum Operating Temperature+ 150 C--
SeriesFMY4--
DC Current Gain hFE Max560--
Height1.1 mm--
Length2.9 mm--
PackagingReel--
Width1.6 mm--
BrandROHM Semiconductor--
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesFMY4A--
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