FJV4104RMTF vs FJV4104 vs FJV4104R

 
PartNumberFJV4104RMTFFJV4104FJV4104R
DescriptionBipolar Transistors - Pre-Biased 50V/100mA/47K 47K
ManufacturerON SemiconductorFAIRCHILDFAIRCHILD
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Typical Input Resistor47 kOhms47 kOhms47 kOhms
Typical Resistor Ratio111
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.1 A- 0.1 A- 0.1 A
Peak DC Collector Current100 mA100 mA100 mA
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesFJV4104R--
PackagingReelReelReel
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO- 10 V--
Height0.93 mm--
Length2.92 mm--
TypePNP Epitaxial Silicon Transistor--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.002116 oz0.002116 oz
Package Case-SOT-23-3SOT-23-3
Pd Power Dissipation-0.2 W0.2 W
Collector Emitter Voltage VCEO Max-50 V50 V
Emitter Base Voltage VEBO-- 10 V- 10 V
DC Collector Base Gain hfe Min-6868
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