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| PartNumber | FJV4101RMTF | FJV4101RMTF_Q | FJV4101RMTF , 1N5940B |
| Description | Bipolar Transistors - Pre-Biased PNP/50V/100mA 4.7K 4.7K | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FJV4101R | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 20 | - | - |
| Emitter Base Voltage VEBO | - 10 V | - | - |
| Height | 0.93 mm | - | - |
| Length | 2.92 mm | - | - |
| Type | PNP Epitaxial Silicon Transistor | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |