FJP13009 vs FJP13009-1 vs FJP13009-2

 
PartNumberFJP13009FJP13009-1FJP13009-2
DescriptionBipolar Transistors - BJT NPN Sil Transistor
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current12 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesFJP13009--
Height9.4 mm (Max)--
Length10.1 mm (Max)--
PackagingBulk--
Width4.7 mm (Max)--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation100000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Part # AliasesFJP13009_NL--
Unit Weight0.063493 oz--
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