FJN4301RTA vs FJN4301RBU vs FJN4301R

 
PartNumberFJN4301RTAFJN4301RBUFJN4301R
DescriptionBipolar Transistors - Pre-Biased PNP Si Transistor EpitaxialBipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYY-
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Typical Input Resistor4.7 kOhms4.7 kOhms4.7 kOhms
Typical Resistor Ratio111
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3 Kinked LeadTO-92-3-
DC Collector/Base Gain hfe Min2020-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current- 0.1 A- 0.1 A- 0.1 A
Peak DC Collector Current100 mA100 mA100 mA
Pd Power Dissipation300 mW300 mW-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesFJN4301R--
PackagingAmmo PackBulkAmmo Pack
DC Current Gain hFE Max2020-
Emitter Base Voltage VEBO- 10 V- 10 V-
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
TypePNP Epitaxial Silicon TransistorPNP Epitaxial Silicon Transistor-
Width4.19 mm4.19 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity20001000-
SubcategoryTransistorsTransistors-
Unit Weight0.008466 oz0.006286 oz0.008466 oz
Package Case--TO-92-3 Kinked Lead
Pd Power Dissipation--0.3 W
Collector Emitter Voltage VCEO Max--50 V
Emitter Base Voltage VEBO--- 10 V
DC Collector Base Gain hfe Min--20
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