PartNumber | FJN4301RTA | FJN4301RBU | FJN4301R |
Description | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K | |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
RoHS | Y | Y | - |
Configuration | Single | Single | Single |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms |
Typical Resistor Ratio | 1 | 1 | 1 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 Kinked Lead | TO-92-3 | - |
DC Collector/Base Gain hfe Min | 20 | 20 | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
Continuous Collector Current | - 0.1 A | - 0.1 A | - 0.1 A |
Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
Pd Power Dissipation | 300 mW | 300 mW | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | FJN4301R | - | - |
Packaging | Ammo Pack | Bulk | Ammo Pack |
DC Current Gain hFE Max | 20 | 20 | - |
Emitter Base Voltage VEBO | - 10 V | - 10 V | - |
Height | 5.33 mm | 5.33 mm | - |
Length | 5.2 mm | 5.2 mm | - |
Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor | - |
Width | 4.19 mm | 4.19 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 2000 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.008466 oz | 0.006286 oz | 0.008466 oz |
Package Case | - | - | TO-92-3 Kinked Lead |
Pd Power Dissipation | - | - | 0.3 W |
Collector Emitter Voltage VCEO Max | - | - | 50 V |
Emitter Base Voltage VEBO | - | - | - 10 V |
DC Collector Base Gain hfe Min | - | - | 20 |