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| PartNumber | FJN3310RTA | FJN3311RBU | FJN3310RBU |
| Description | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased NPN/40V/100mA/22K | Bipolar Transistors - Pre-Biased NPN/40V/100mA/10K |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Configuration | Single | Single | Single |
| Transistor Polarity | NPN | NPN | NPN |
| Typical Input Resistor | 10 kOhms | 22 kOhms | 10 kOhms |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 | TO-92-3 |
| DC Collector/Base Gain hfe Min | 100 | 100 | 100 |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V | 40 V |
| Continuous Collector Current | 0.1 A | 0.1 A | 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 300 mW | 300 mW | 300 mW |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Ammo Pack | Bulk | Bulk |
| DC Current Gain hFE Max | 600 | 600 | 600 |
| Emitter Base Voltage VEBO | 5 V | - 5 V | 5 V |
| Height | 5.33 mm | 5.33 mm | 5.33 mm |
| Length | 5.2 mm | 5.2 mm | 5.2 mm |
| Type | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor |
| Width | 4.19 mm | 4.19 mm | 4.19 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 2000 | 1000 | 1000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | FJN3310RTA_NL | - | - |
| Unit Weight | 0.010088 oz | 0.006286 oz | 0.006286 oz |