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| PartNumber | FJN3305RTA | FJN3305RBU | FJN3305/R3305 |
| Description | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 0.47 | 0.47 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 | - |
| DC Collector/Base Gain hfe Min | 30 | 30 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 300 mW | 300 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FJN3305R | - | - |
| Packaging | Ammo Pack | Bulk | - |
| DC Current Gain hFE Max | 30 | 30 | - |
| Emitter Base Voltage VEBO | 10 V | 10 V | - |
| Height | 5.33 mm | 5.33 mm | - |
| Length | 5.2 mm | 5.2 mm | - |
| Type | NPN Epitaxial Silicon Transistor | NPN Epitaxial Silicon Transistor | - |
| Width | 4.19 mm | 4.19 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 2000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.008466 oz | 0.006286 oz | - |