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| PartNumber | FGA6540WDF | FGA6530WDF | FGA655-638G |
| Description | IGBT Transistors FS3TIGBT TO3PN 40A 650V | IGBT Transistors FS3 650V SHD prolferation | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-3PN | TO-3PN-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
| Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 80 A | 60 A | - |
| Pd Power Dissipation | 238 W | 176 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | FGA6540WDF | FGA6530WDF | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 80 A | 60 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Gate Emitter Leakage Current | 400 nA | +/- 400 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.225789 oz | 0.225789 oz | - |