 | | | |
| PartNumber | FF200R12KE3 | FF200R12KE3_B2 | FF200R12KE |
| Description | IGBT Modules 1200V 200A DUAL | IGBT Modules N-CH 1.2KV 295A | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | N | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 200 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 1.05 kW | - | - |
| Package / Case | IS5a ( 62 mm )-7 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | Tray | - |
| Height | 30.9 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF200R12KE3HOSA1 SP000100735 | FF200R12KE3B2HOSA1 SP000100748 | - |
| Product | - | IGBT Silicon Modules | - |