FDR838P vs FDR838P , 1N5251B-TAP vs FDR838P(8PIN)

 
PartNumberFDR838PFDR838P , 1N5251B-TAPFDR838P(8PIN)
DescriptionMOSFET SSOT-8 P-CH -20V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance14 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.02 mm--
Length4.06 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypeMOSFET--
Width3.3 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min28 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity750--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesFDR838P_NL--
Unit Weight0.001467 oz--
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