FDD5N50NZFTM vs FDD5N50NZ vs FDD5N50NZF

 
PartNumberFDD5N50NZFTMFDD5N50NZFDD5N50NZF
DescriptionMOSFET 500V N-Channel UniFET-II
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance1.47 Ohms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation62.5 W--
ConfigurationSingle--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFDD5N50NZF--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.2 S--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time19 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.009184 oz--
Top