FDD1600N10ALZ vs FDD1600N10ALZD vs FDD16AN08

 
PartNumberFDD1600N10ALZFDD1600N10ALZDFDD16AN08
DescriptionMOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUNDMOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-5-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current6.8 A6.8 A-
Rds On Drain Source Resistance175 mOhms160 mOhms-
Vgs th Gate Source Threshold Voltage2.8 V--
Qg Gate Charge3.61 nC2.71 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation14.9 W14.9 W-
ConfigurationSingleSingle-
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFDD1600N10ALZFDD1600N10ALZD-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min34 S19.6 S-
Fall Time14 ns2 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns2 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.009184 oz0.009184 oz-
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
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