FDA38N30 vs FDA33N25 vs FDA337N

 
PartNumberFDA38N30FDA33N25FDA337N
DescriptionMOSFET UniFET1 300V N-chan MOSFETMOSFET 250V N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V250 V-
Id Continuous Drain Current38 A33 A-
Rds On Drain Source Resistance70 mOhms94 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 125 C+ 150 C-
Pd Power Dissipation312 W245 W-
ConfigurationSingleSingle-
TradenameUniFETUniFET-
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
SeriesFDA38N30FDA33N25-
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min6.3 S--
Product TypeMOSFETMOSFET-
Factory Pack Quantity450450-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.225789 oz0.225789 oz-
Channel Mode-Enhancement-
Fall Time-68 ns-
Rise Time-142 ns-
Typical Turn Off Delay Time-77 ns-
Typical Turn On Delay Time-33 ns-
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