FCPF190N65S3L1 vs FCPF190N65FL1 vs FCPF190N65F

 
PartNumberFCPF190N65S3L1FCPF190N65FL1FCPF190N65F
DescriptionMOSFET SuperFET3 650V 190 mOhm, TO220F PKGMOSFET SF2 650V 190MOHM F TO220F
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220F-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current14 A20.6 A-
Rds On Drain Source Resistance165 mOhms190 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V5 V-
Vgs Gate Source Voltage30 V20 V, 30 V-
Qg Gate Charge30 nC60 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation33 W39 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTube-
SeriesFCPF190N65S3L1FCPF190N65FL1-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min10 S18 S-
Fall Time15 ns4.2 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns11 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time52 ns62 ns-
Typical Turn On Delay Time19 ns25 ns-
Unit Weight0.080072 oz0.080072 oz-
Tradename-SuperFET II FRFET-
Height-16.07 mm-
Length-10.36 mm-
Width-4.9 mm-
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