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| PartNumber | EMG6T2R | EMG6 |
| Description | Bipolar Transistors - Pre-Biased DUAL DIGITAL NPN/NPN INPUT RESISTOR | |
| Manufacturer | ROHM Semiconductor | ROHM |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - |
| Configuration | Dual Common Emitter | - |
| Transistor Polarity | NPN | - |
| Typical Input Resistor | 47 kOhms | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | EMT-5 | - |
| DC Collector/Base Gain hfe Min | 100 | - |
| Collector Emitter Voltage VCEO Max | 50 V | - |
| Continuous Collector Current | 100 mA | - |
| Peak DC Collector Current | 100 mA | - |
| Pd Power Dissipation | 150 mW | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | EMG6 | - |
| Packaging | Reel | - |
| DC Current Gain hFE Max | 600 | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Height | 0.5 mm | - |
| Length | 1.6 mm | - |
| Width | 1.2 mm | - |
| Brand | ROHM Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | EMG6 | - |