DTA114TETL vs DTA114TE RK vs DTA114TE

 
PartNumberDTA114TETLDTA114TE RKDTA114TE
DescriptionBipolar Transistors - Pre-Biased PNP 50V 100MABipolar Transistors - BJT Digital Transistor PNP
ManufacturerROHM SemiconductorTaiwan SemiconductorROHM
Product CategoryBipolar Transistors - Pre-BiasedTransistors - Bipolar (BJT) - RFTransistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingle--
Transistor PolarityPNPPNP-
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseEMT-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesDTA114TET--
PackagingReelReel-
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO- 5 V--
Height0.7 mm--
Length1.6 mm--
Width0.8 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesDTA114TE--
Unit Weight-0.000071 oz-
Package Case-SOT-523-3-
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