DNLS350E-13 vs DNLS350E vs DNLS350E-13 , XC2151T51C

 
PartNumberDNLS350E-13DNLS350EDNLS350E-13 , XC2151T51C
DescriptionBipolar Transistors - BJT NPN 1W
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage290 mV290 mV-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDNLS350DNLS350-
Height1.6 mm--
Length6.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width3.5 mm--
BrandDiodes Incorporated--
Continuous Collector Current3 A3 A-
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-3A-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-100 @ 2A, 2V-
Vce Saturation Max Ib Ic-290mV @ 200mA, 2A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-50 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-100 at 2 A at 2 V-
DC Current Gain hFE Max-200 at 0.5 A at 2 V-
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