DMTH6004SCTB-13 vs DMTH6004SCT vs DMTH6004SK3-13

 
PartNumberDMTH6004SCTB-13DMTH6004SCTDMTH6004SK3-13
DescriptionMOSFET Enh Mode FET 41V to 60V TO263MOSFET MOSFET BVDSS:MOSFET MOSFET BVDSS: 41V-60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseTO-263-3TO-220-3TO-252-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge95.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation4.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTubeReel
Height4.82 mm--
Length10.66 mm--
SeriesDMTH6004DMTH6004DMTH6004
Transistor Type1 N-Channel--
Width9.65 mm--
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min---
Fall Time12 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time11.7 ns--
Factory Pack Quantity800502500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time13.2 ns--
Unit Weight0.068654 oz0.063493 oz0.011993 oz
Top