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| PartNumber | DMTH6004LPSQ-13 | DMTH6004LPS-13 | DMTH6002LPS-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | MOSFET MOSFETBVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI5060-8 | PowerDI5060-8 | PowerDI5060-8 |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Series | DMTH6004 | DMTH6004 | DMTH6002 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.003386 oz | 0.003386 oz | 0.003422 oz |
| RoHS | - | Y | Y |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Id Continuous Drain Current | - | 22 A | 100 A |
| Rds On Drain Source Resistance | - | 3.1 mOhms | 1.7 mOhms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 96.3 nC | 130.8 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 2.6 W | 167 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 32.9 ns | 19.5 ns |
| Rise Time | - | 17.7 ns | 10.8 ns |
| Typical Turn Off Delay Time | - | 53.5 ns | 44 ns |
| Typical Turn On Delay Time | - | 9.9 ns | 11.2 ns |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |