DMT6016LFDF-7 vs DMT6016LJ3 vs DMT6016LFDF-13

 
PartNumberDMT6016LFDF-7DMT6016LJ3DMT6016LFDF-13
DescriptionMOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9AMOSFET MOSFET BVDSS: 31V-40VMOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseU-DFN2020-F-6-U-DFN2020-F-6
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V-60 V
Id Continuous Drain Current8.9 A-8.9 A
Rds On Drain Source Resistance16 mOhms-16 mOhms
Vgs th Gate Source Threshold Voltage3 V-3 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge17 nC-17 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.9 W-1.9 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelTubeReel
SeriesDMT60-DMT60
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time6.8 ns-6.8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5.2 ns-5.2 ns
Factory Pack Quantity30007510000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12.9 ns-12.9 ns
Typical Turn On Delay Time3.4 ns-3.4 ns
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