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| PartNumber | DMT10H010LCT | DMT10H010LK3-13 | DMT10H010LPS |
| Description | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | MOSFET MOSFET BVDSS 61V-100V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 98 A | - | - |
| Rds On Drain Source Resistance | 6.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 53.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 139 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Reel | - |
| Series | DMT10H010 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14.1 ns | - | - |
| Factory Pack Quantity | 50 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 42.9 ns | - | - |
| Typical Turn On Delay Time | 11.6 ns | - | - |
| Unit Weight | 0.063493 oz | 0.011993 oz | - |