DMP2004DMK-7 vs DMP2004DMK vs DMP2004DMK-7-F

 
PartNumberDMP2004DMK-7DMP2004DMKDMP2004DMK-7-F
DescriptionMOSFET 500mW -20Vdss
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current550 mA--
Rds On Drain Source Resistance900 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMP2004DMP2004-
Transistor Type2 P-Channel2 P-Channel-
Width1.6 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000529 oz--
Package Case-SOT-23-6-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-26-
FET Type-2 P-Channel (Dual)-
Power Max-500mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-175pF @ 16V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-550mA-
Rds On Max Id Vgs-900 mOhm @ 430mA, 4.5V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs---
Pd Power Dissipation-500 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-550 mA-
Vds Drain Source Breakdown Voltage-- 20 V-
Rds On Drain Source Resistance-900 mOhms-
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