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DMN62D0UW-7 vs DMN62D0UW-13 vs DMN62D0UWQ-13

 
PartNumberDMN62D0UW-7DMN62D0UW-13DMN62D0UWQ-13
DescriptionMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET MOSFET BVDSS: 31V-40V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-323-3SOT-323-3SOT-323-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V-60 V
Id Continuous Drain Current340 mA-340 mA
Rds On Drain Source Resistance1.2 Ohms-3 Ohms
Vgs th Gate Source Threshold Voltage500 mV-500 mV
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge500 pC-500 pC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation320 mW-470 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesDMN62D0UWDMN62D0UW-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min1.8 mS--
Fall Time12.5 ns-12.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.5 ns-2.5 ns
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time22.6 ns-22.6 ns
Typical Turn On Delay Time2.4 ns-2.4 ns
Unit Weight0.000176 oz0.000176 oz-
Qualification--AEC-Q101
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