PartNumber | DMN6070SSD-13 | DMN6070SFCL-7 | DMN6070SFCL |
Description | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOIC-8 | X1-DFN1616-6 | - |
Number of Channels | 2 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 3.3 A | 2.5 A | - |
Rds On Drain Source Resistance | 80 Ohms | 120 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 3 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 12.3 nC | 12.3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.5 W | 1.8 W | - |
Configuration | Dual | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Series | DMN60 | DMN60 | DMN60 |
Transistor Type | 2 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 11 ns | 11 ns | 11 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4.1 ns | 4.1 ns | 4.1 ns |
Factory Pack Quantity | 2500 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
Typical Turn On Delay Time | 3.5 ns | 3.5 ns | 3.5 ns |
Unit Weight | 0.002610 oz | - | - |
Forward Transconductance Min | - | 2.6 S | - |
Package Case | - | - | 6-PowerUFDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | X1-DFN1616-6 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 600mW |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 606pF @ 20V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 3A (Ta) |
Rds On Max Id Vgs | - | - | 85 mOhm @ 1.5A, 10V |
Vgs th Max Id | - | - | 3V @ 250μA |
Gate Charge Qg Vgs | - | - | 12.3nC @ 10V |
Pd Power Dissipation | - | - | 1.8 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 2.5 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Rds On Drain Source Resistance | - | - | 120 mOhms |
Qg Gate Charge | - | - | 12.3 nC |
Forward Transconductance Min | - | - | 2.6 S |