PartNumber | DMN6068LK3 | DMN6068LK3-13 | DMN6068LK3-G |
Description | MOSFET N-CH 60V 6A DPAK | ||
Manufacturer | - | Diodes Incorporated | - |
Product Category | - | FETs - Single | - |
Series | - | DMN6068 | - |
Packaging | - | Digi-ReelR Alternate Packaging | - |
Unit Weight | - | 0.139332 oz | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Technology | - | Si | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 1 Channel | - |
Supplier Device Package | - | TO-252-3 | - |
Configuration | - | Single | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 2.12W | - |
Transistor Type | - | 1 N-Channel | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 502pF @ 30V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 6A (Ta) | - |
Rds On Max Id Vgs | - | 68 mOhm @ 12A, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 10.3nC @ 10V | - |
Pd Power Dissipation | - | 4.12 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 8.7 ns | - |
Rise Time | - | 10.8 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 8.5 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 68 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 11.9 ns | - |
Typical Turn On Delay Time | - | 3.6 ns | - |
Qg Gate Charge | - | 10.3 nC | - |
Forward Transconductance Min | - | 19.7 S | - |
Channel Mode | - | Enhancement | - |