DMN5L06VAK-7 vs DMN5L06VAK vs DMN5L06VAK-7-F

 
PartNumberDMN5L06VAK-7DMN5L06VAKDMN5L06VAK-7-F
DescriptionMOSFET 20V 280mA
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current280 mA--
Rds On Drain Source Resistance2 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 mW--
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR-
Height0.6 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
SeriesDMN5L06DMN5L06-
Transistor Type2 N-Channel2 N-Channel-
Width1.2 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000106 oz0.000106 oz-
Package Case-SOT-563, SOT-666-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-563-
FET Type-2 N-Channel (Dual)-
Power Max-250mW-
Drain to Source Voltage Vdss-50V-
Input Capacitance Ciss Vds-50pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-280mA-
Rds On Max Id Vgs-2 Ohm @ 50mA @ 5V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs---
Pd Power Dissipation-250 mW-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-280 mA-
Vds Drain Source Breakdown Voltage-50 V-
Rds On Drain Source Resistance-2 Ohms-
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