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| PartNumber | DMN2011UFDE-7 | DMN2011UFDE-13 | DMN2010UDZ-7 |
| Description | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | MOSFET Dual N-Ch Enh FET 24V 8Vgss 0.7W |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2020-E-6 | U-DFN2020-E-6 | U-DFN2535-6 |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 11.7 A | 11.7 A | - |
| Rds On Drain Source Resistance | 15 mOhms | 15 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 56 nC | 56 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.97 W | 1.97 W | - |
| Configuration | Single | Single | Dual |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Series | DMN2011 | DMN2011 | DMN2010 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 2 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 13.5 ns | 13.5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.6 ns | 2.6 ns | - |
| Factory Pack Quantity | 3000 | 10000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21.6 ns | 21.6 ns | - |
| Typical Turn On Delay Time | 3.6 ns | 3.6 ns | - |
| Tradename | - | PowerDI | - |
| Unit Weight | - | - | 0.000423 oz |